58364 Products
|
|
|
|
|||||
|---|---|---|---|---|---|---|---|
| SN: | Image | Part No. | Manufacturer | Description | Stock | Pricing (Sort by price) | Buy |
| 1 | 
|
TIP120 | MULTICOMP PRO | MULTICOMP PRO - TIP120 - Darlington Transistor, NPN, 60 V, 65 W, 5 A, TO-220, 3 Pins | 21714 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |
| 2 | 
|
HCPL-0501-000E | BROADCOM | BROADCOM - HCPL-0501-000E - Optocoupler, Transistor Output, 1 Channel, SOIC, 8 Pins, 25 mA, 3.75 kV, 19 % | 14409 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |
| 3 | 
|
SD2941-10W | STMICROELECTRONICS | STMICROELECTRONICS - SD2941-10W - RF FET Transistor, 130 V, 20 A, 389 W, 175 MHz, M174 | 433 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |
| 4 | 
|
FDC6561AN | ONSEMI | ONSEMI - FDC6561AN - Dual MOSFET, N Channel, 30 V, 2.5 A, 0.082 ohm | 100543 *LT 7-14 W Days.. |
|
Min.: 5 Mult.: 5 |
| 5 | 
|
ZXMS6004FFTA | DIODES INC. | DIODES INC. - ZXMS6004FFTA - Power MOSFET, N Channel, 60 V, 2 A, 0.5 ohm, SOT-23F, Surface Mount | 160661 *LT 7-14 W Days.. |
|
Min.: 5 Mult.: 5 |
| 6 | 
|
FDD86252 | ONSEMI | ONSEMI - FDD86252 - Power MOSFET, N Channel, 150 V, 27 A, 0.052 ohm, TO-252 (DPAK), Surface Mount | 86168 *LT 7-14 W Days.. |
|
Min.: 5 Mult.: 5 |
| 7 | 
|
IAUT300N08S5N012ATMA2 | INFINEON | INFINEON - IAUT300N08S5N012ATMA2 - Power MOSFET, N Channel, 80 V, 300 A, 1200 µohm, HSOF, Surface Mount | 26862 *LT 7-14 W Days.. |
|
Min.: 5 Mult.: 5 |
| 8 | 
|
NTMC083NP10M5L | ONSEMI | ONSEMI - NTMC083NP10M5L - Dual MOSFET, N and P Channel, 100 V, 100 V, 4.1 A, 4.1 A, 0.0594 ohm | 10903 *LT 7-14 W Days.. |
|
Min.: 5 Mult.: 5 |
| 9 | 
|
TLP290-4(E(T | TOSHIBA | TOSHIBA - TLP290-4(E(T - Optocoupler, 4 Channel, SOIC, 16 Pins, 50 mA, 2.5 kV, 50 % | 16857 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |
| 10 |
|
TIP42A | MULTICOMP PRO | MULTICOMP PRO - TIP42A - Bipolar (BJT) Single Transistor, General Purpose, PNP, 60 V, 6 A, 65 W, TO-220, Through Hole | 3620 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |
| 11 |
|
MMBT4403LT3G | ONSEMI | ONSEMI - MMBT4403LT3G - Bipolar (BJT) Single Transistor, PNP, 40 V, 600 mA, 225 mW, SOT-23, Surface Mount | 85920 *LT 7-14 W Days.. |
|
Min.: 5 Mult.: 5 |
| 12 | 
|
MMBTA14LT1G | ONSEMI | ONSEMI - MMBTA14LT1G - Darlington Transistor, Darlington, NPN, 30 V, 225 mW, 300 mA, SOT-23, 3 Pins | 25369 *LT 7-14 W Days.. |
|
Min.: 5 Mult.: 5 |
| 13 | 
|
MMBFJ108 | ONSEMI | ONSEMI - MMBFJ108 - JFET Transistor, JFET, -25 V, 80 mA, -10 V, SOT-23, 3 Pin, 150 °C | 186272 *LT 7-14 W Days.. |
|
Min.: 5 Mult.: 5 |
| 14 |
|
STD20NF06LT4 | STMICROELECTRONICS | STMICROELECTRONICS - STD20NF06LT4 - Power MOSFET, N Channel, 60 V, 24 A, 0.04 ohm, TO-252 (DPAK), Surface Mount | 77085 *LT 7-14 W Days.. |
|
Min.: 5 Mult.: 5 |
| 15 | 
|
STD3NK80ZT4 | STMICROELECTRONICS | STMICROELECTRONICS - STD3NK80ZT4 - Power MOSFET, N Channel, 800 V, 2.5 A, 4.5 ohm, TO-252 (DPAK), Surface Mount | 8473 *LT 7-14 W Days.. |
|
Min.: 5 Mult.: 5 |
| 16 |
|
STP20NM60FD | STMICROELECTRONICS | STMICROELECTRONICS - STP20NM60FD - Power MOSFET, N Channel, 600 V, 20 A, 0.29 ohm, TO-220, Through Hole | 16995 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |
| 17 |
|
IPD110N12N3GATMA1 | INFINEON | INFINEON - IPD110N12N3GATMA1 - Power MOSFET, N Channel, 120 V, 75 A, 0.011 ohm, TO-252 (DPAK), Surface Mount | 23798 *LT 7-14 W Days.. |
|
Min.: 5 Mult.: 5 |
| 18 |
|
IPD90N03S4L02ATMA1 | INFINEON | INFINEON - IPD90N03S4L02ATMA1 - Power MOSFET, N Channel, 30 V, 90 A, 2200 µohm, TO-252 (DPAK), Surface Mount | 18604 *LT 7-14 W Days.. |
|
Min.: 5 Mult.: 5 |
| 19 | 
|
BSC014N04LSIATMA1 | INFINEON | INFINEON - BSC014N04LSIATMA1 - Power MOSFET, N Channel, 40 V, 100 A, 1450 µohm, TDSON, Surface Mount | 23961 *LT 7-14 W Days.. |
|
Min.: 5 Mult.: 5 |
| 20 | 
|
IRFR024NTRPBF | INFINEON | INFINEON - IRFR024NTRPBF - Power MOSFET, N Channel, 55 V, 17 A, 0.075 ohm, TO-252AA, Surface Mount | 71973 *LT 7-14 W Days.. |
|
Min.: 5 Mult.: 5 |
| 21 | 
|
BC847BPN,115 | NEXPERIA | Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A | 166578 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |
| 22 |
|
BSS138PS,115 | NEXPERIA | Transistor: N-MOSFET x2; unipolar; 60V; 200mA; Idm: 1.2A; 420mW | 15382 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |
| 23 | 
|
BC817-25 | DIOTEC SEMICONDUCTOR | Transistor: NPN; bipolar; 45V; 0.8A; 310mW; SOT23 | 691932 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |
| 24 | 
|
MMFTP3401 | DIOTEC SEMICONDUCTOR | Transistor: P-MOSFET; unipolar; -30V; -4A; Idm: -27A; 1.4W; SOT23 | 195503 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |
| 25 | 
|
BSS138PW,115 | NEXPERIA | Transistor: N-MOSFET; unipolar; 60V; 0.32A; 260mW; SC70,SOT323 | 394696 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |
| 26 |
|
BC847B | DIOTEC SEMICONDUCTOR | Transistor: NPN; bipolar; 45V; 0.1A; 250mW; SOT23 | 743190 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |
| 27 | 
|
TIP122 | STMicroelectronics | Transistor: NPN; bipolar; Darlington; 100V; 5A; 65W; TO220AB | 6214 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |
| 28 |
|
BC807-40 | DIOTEC SEMICONDUCTOR | Transistor: PNP; bipolar; 45V; 0.8A; 310mW; SOT23 | 370153 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |
| 29 | 
|
BCV47,215 | NEXPERIA | Transistor: NPN; bipolar; Darlington; 60V; 0.5A; 250mW | 14875 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |
| 30 |
|
AO3401A | ALPHA & OMEGA SEMICONDUCTOR | Transistor: P-MOSFET; unipolar; -30V; -4A; 1.4W; SOT23 | 2013 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |
| 31 |
|
AO3400A | ALPHA & OMEGA SEMICONDUCTOR | Transistor: N-MOSFET; unipolar; 30V; 4.7A; 1.4W; SOT23 | 26605 *LT 7-14 W Days.. |
|
Min.: 10 Mult.: 1 |
| 32 |
|
2N7002 | DIOTEC SEMICONDUCTOR | Transistor: N-MOSFET; unipolar; 60V; 0.28A; Idm: 1.2A; 0.35W; SOT23 | 221773 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |
| 33 | 
|
IRF9389TRPBF | INFINEON TECHNOLOGIES | Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.8/-4.6A; 2W; SO8 | 3798 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |
| 34 | 
|
BC547B | DIOTEC SEMICONDUCTOR | Transistor: NPN; bipolar; 45V; 0.1A; 500mW; TO92 | 156468 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |
| 35 | 
|
BDW93C | STMicroelectronics | Transistor: NPN; bipolar; Darlington; 100V; 12A; 80W; TO220AB | 1447 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |
| 36 |
|
2N7002BKS,115 | NEXPERIA | Transistor: N-MOSFET x2; Trench; unipolar; 60V; 0.215A; Idm: 1.2A | 15819 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |
| 37 |
|
SI4925DDY-T1-GE3 | VISHAY | Transistor: P-MOSFET x2; TrenchFET®; unipolar; -30V; -5.9A; 5W; SO8 | 812 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |
| 38 |
|
IRF7103TRPBF | INFINEON TECHNOLOGIES | Transistor: N-MOSFET x2; unipolar; 50V; 3A; 2W; SO8 | 3159 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |
| 39 |
|
AO3407A | ALPHA & OMEGA SEMICONDUCTOR | Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -25A; 900mW; SOT23 | 31831 *LT 7-14 W Days.. |
|
Min.: 5 Mult.: 1 |
| 40 | 
|
FGH40N60SMD | ONSEMI | Transistor: IGBT; 600V; 40A; 174W; TO247-3 | 251 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |